SIB912DK-T1-GE3
RoHS

SIB912DK-T1-GE3

Part NoSIB912DK-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET 2N-CH 20V 1.5A SC75-6L
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ECAD Module SIB912DK-T1-GE3
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Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusActive
TechnologyMOSFET (Metal Oxide)
Configuration2 N-Channel (Dual)
FETFeatureLogic Level Gate
DraintoSourceVoltage(Vdss)20V
Current-ContinuousDrain(Id)@25°C1.5A
RdsOn(Max)@Id216mOhm @ 1.8A, 4.5V
Vgs1V @ 250µA
Vgs(th)(Max)@Id3nC @ 8V
GateCharge(Qg)(Max)@Vgs95pF @ 10V
InputCapacitance(Ciss)(Max)@Vds3.1W
Power-Max-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypePowerPAK® SC-75-6L Dual
Package/CasePowerPAK® SC-75-6L Dual
SupplierDevicePackage-
Grade-
Qualification
In Stock: 10198
Pricing
QTY UNIT PRICE EXT PRICE
1 0.4851
10 0.4754
100 0.4608
1000 0.4463
10000 0.4269
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product