SIDR220DP-T1-RE3
Part NoSIDR220DP-T1-RE3
ManufacturerVishay Siliconix
DescriptionN-CHANNEL 25-V (D-S) MOSFET
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET® Gen IV
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)25 V
Current-ContinuousDrain(Id)@25°C87.7A (Ta), 100A (Tc)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)5.8mOhm @ 20A, 10V
RdsOn(Max)@Id2.1V @ 250µA
Vgs200 nC @ 10 V
Vgs(th)(Max)@Id+16V, -12V
Vgs(Max)10850 pF @ 10 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature6.25W (Ta), 125W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperature-
MountingType-
SupplierDevicePackageSurface Mount
Package/CasePowerPAK® SO-8DC
GateCharge(Qg)(Max)@VgsPowerPAK® SO-8
Grade
Qualification
In Stock:
2619
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 2.3763 | |
| 10 | 2.3288 | |
| 100 | 2.2575 | |
| 1000 | 2.1862 | |
| 10000 | 2.0911 |
Associated Product
