SIDR510EP-T1-RE3
Part NoSIDR510EP-T1-RE3
ManufacturerVishay Siliconix
DescriptionN-CHANNEL 100 V (D-S) 175C MOSFE
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET® Gen V
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)100 V
Current-ContinuousDrain(Id)@25°C33A (Ta), 148A (Tc)
DriveVoltage(MaxRdsOn7.5V, 10V
MinRdsOn)3.6mOhm @ 20A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs81 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)4980 pF @ 50 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature7.5W (Ta), 150W (Tc)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperature-
MountingType-
SupplierDevicePackageSurface Mount
Package/CasePowerPAK® SO-8DC
GateCharge(Qg)(Max)@VgsPowerPAK® SO-8
Grade
Qualification
In Stock:
20064
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 2.6754 | |
| 10 | 2.6219 | |
| 100 | 2.5416 | |
| 1000 | 2.4614 | |
| 10000 | 2.3544 |
Associated Product
