SIDR626DP-T1-GE3
Part NoSIDR626DP-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 60V 42.8A/100A PPAK
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET® Gen IV
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)60 V
Current-ContinuousDrain(Id)@25°C42.8A (Ta), 100A (Tc)
DriveVoltage(MaxRdsOn6V, 10V
MinRdsOn)1.7mOhm @ 20A, 10V
RdsOn(Max)@Id3.4V @ 250µA
Vgs102 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)5130 pF @ 30 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature6.25W (Ta), 125W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperature-
MountingType-
SupplierDevicePackageSurface Mount
Package/CasePowerPAK® SO-8DC
GateCharge(Qg)(Max)@VgsPowerPAK® SO-8
Grade
Qualification
In Stock:
5189
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 2.9866 | |
| 10 | 2.9269 | |
| 100 | 2.8373 | |
| 1000 | 2.7477 | |
| 10000 | 2.6282 |
Associated Product
