SIDR668DP-T1-GE3
Part NoSIDR668DP-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 100V 23.2A/95A PPAK
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET® Gen IV
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)100 V
Current-ContinuousDrain(Id)@25°C23.2A (Ta), 95A (Tc)
DriveVoltage(MaxRdsOn7.5V, 10V
MinRdsOn)4.8mOhm @ 20A, 10V
RdsOn(Max)@Id3.4V @ 250µA
Vgs108 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)5400 pF @ 50 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature6.25W (Ta), 125W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypePowerPAK® SO-8DC
SupplierDevicePackagePowerPAK® SO-8
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
5763
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 3.2712 | |
| 10 | 3.2058 | |
| 100 | 3.1076 | |
| 1000 | 3.0095 | |
| 10000 | 2.8787 |
Associated Product
