SIE832DF-T1-GE3
Part NoSIE832DF-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 40V 50A 10POLARPAK
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR)
SeriesTrenchFET®
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)40 V
Current-ContinuousDrain(Id)@25°C50A (Tc)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)5.5mOhm @ 14A, 10V
RdsOn(Max)@Id3V @ 250µA
Vgs77 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds5.2W (Ta), 104W (Tc)
FETFeature-55°C ~ 150°C (TJ)
PowerDissipation(Max)Surface Mount
OperatingTemperature10-PolarPAK® (S)
MountingType10-PolarPAK® (S)
SupplierDevicePackage3800 pF @ 20 V
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
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6856
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Associated Product
