SIE882DF-T1-GE3
Part NoSIE882DF-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 25V 60A 10POLARPAK
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusLast Time Buy
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)25 V
Current-ContinuousDrain(Id)@25°C60A (Tc)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)1.4mOhm @ 20A, 10V
RdsOn(Max)@Id2.2V @ 250µA
Vgs145 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)6400 pF @ 12.5 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature5.2W (Ta), 125W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperature-
MountingType-
SupplierDevicePackageSurface Mount
Package/Case10-PolarPAK® (L)
GateCharge(Qg)(Max)@Vgs10-PolarPAK® (L)
Grade
Qualification
In Stock:
4344
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 2.0726 | |
| 10 | 2.0311 | |
| 100 | 1.969 | |
| 1000 | 1.9068 | |
| 10000 | 1.8239 |
Associated Product
