SIHB10N40D-GE3
Part NoSIHB10N40D-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 400V 10A TO263
Datasheet
Download Now!
ECAD Module
Specification
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)400 V
Current-ContinuousDrain(Id)@25°C10A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)600mOhm @ 5A, 10V
RdsOn(Max)@Id5V @ 250µA
Vgs30 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)526 pF @ 100 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature147W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypeTO-263 (D2PAK)
SupplierDevicePackageTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
7852
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.9024 | |
| 10 | 1.8644 | |
| 100 | 1.8073 | |
| 1000 | 1.7502 | |
| 10000 | 1.6741 |
Associated Product
