SIHB12N60ET1-GE3
Part NoSIHB12N60ET1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 600V 12A TO263
Datasheet
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ECAD Module
Specification
PackageBulk
SeriesE
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)600 V
Current-ContinuousDrain(Id)@25°C12A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)380mOhm @ 6A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs58 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)937 pF @ 100 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature147W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypeTO-263 (D2PAK)
SupplierDevicePackageTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
3194
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.2096 | |
| 10 | 1.1854 | |
| 100 | 1.1491 | |
| 1000 | 1.1128 | |
| 10000 | 1.0644 |
Associated Product
