SIHB24N65EF-GE3
Part NoSIHB24N65EF-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 650V 24A D2PAK
Datasheet
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Specification
PackageTube
SeriesE
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)650 V
Current-ContinuousDrain(Id)@25°C24A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)156mOhm @ 12A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs122 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)2774 pF @ 100 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature250W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypeTO-263 (D2PAK)
SupplierDevicePackageTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
3189
Pricing
QTY | UNIT PRICE | EXT PRICE |
---|---|---|
1 | 6.1846 | |
10 | 6.0609 | |
100 | 5.8754 | |
1000 | 5.6898 | |
10000 | 5.4424 |