SIHB24N65ET1-GE3
Part NoSIHB24N65ET1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 650V 24A TO263
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR)
SeriesE
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)650 V
Current-ContinuousDrain(Id)@25°C24A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)145mOhm @ 12A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs±30V
Vgs(th)(Max)@Id-
Vgs(Max)250W (Tc)
InputCapacitance(Ciss)(Max)@Vds-55°C ~ 150°C (TJ)
FETFeatureSurface Mount
PowerDissipation(Max)TO-263 (D2PAK)
OperatingTemperatureTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
MountingType122 nC @ 10 V
SupplierDevicePackage2740 pF @ 100 V
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
5077
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 3.612 | |
| 10 | 3.5398 | |
| 100 | 3.4314 | |
| 1000 | 3.323 | |
| 10000 | 3.1786 |
Associated Product
