SIHB30N60E-GE3
Part NoSIHB30N60E-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 600V 29A D2PAK
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)600 V
Current-ContinuousDrain(Id)@25°C29A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)125mOhm @ 15A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs130 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)2600 pF @ 100 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature250W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypeTO-263 (D2PAK)
SupplierDevicePackageTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification
In Stock:
5834
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 6.4713 | |
| 10 | 6.3419 | |
| 100 | 6.1477 | |
| 1000 | 5.9536 | |
| 10000 | 5.6947 |
Associated Product
