SIHB30N60ET1-GE3
Part NoSIHB30N60ET1-GE3
ManufacturerVishay Siliconix
DescriptionN-CHANNEL 600V
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)600 V
Current-ContinuousDrain(Id)@25°C29A (Tc)
DriveVoltage(MaxRdsOn125mOhm @ 15A, 10V
MinRdsOn)4V @ 250µA
RdsOn(Max)@Id130 nC @ 10 V
Vgs±30V
Vgs(th)(Max)@Id2600 pF @ 100 V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds250W (Tc)
FETFeature-55°C ~ 150°C (TJ)
PowerDissipation(Max)Surface Mount
OperatingTemperatureTO-263 (D2PAK)
MountingTypeTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
SupplierDevicePackage10V
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
4717
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 6.4713 | |
| 10 | 6.3419 | |
| 100 | 6.1477 | |
| 1000 | 5.9536 | |
| 10000 | 5.6947 |
Associated Product
