SIHB6N80AE-GE3
Part NoSIHB6N80AE-GE3
ManufacturerVishay Siliconix
DescriptionE SERIES POWER MOSFET D2PAK (TO-
Datasheet
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ECAD Module
Specification
PackageTube
SeriesE
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)800 V
Current-ContinuousDrain(Id)@25°C5A (Tc)
DriveVoltage(MaxRdsOn950mOhm @ 2A, 10V
MinRdsOn)4V @ 250µA
RdsOn(Max)@Id22.5 nC @ 10 V
Vgs±30V
Vgs(th)(Max)@Id422 pF @ 100 V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds62.5W (Tc)
FETFeature-55°C ~ 150°C (TJ)
PowerDissipation(Max)-
OperatingTemperature-
MountingTypeSurface Mount
SupplierDevicePackageTO-263 (D2PAK)
Package/CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
GateCharge(Qg)(Max)@Vgs10V
Grade
Qualification
In Stock:
11274
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 2.2288 | |
| 10 | 2.1842 | |
| 100 | 2.1174 | |
| 1000 | 2.0505 | |
| 10000 | 1.9613 |
Associated Product
