SIHB8N50D-GE3
Part NoSIHB8N50D-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 500V 8.7A TO263
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)500 V
Current-ContinuousDrain(Id)@25°C8.7A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)850mOhm @ 4A, 10V
RdsOn(Max)@Id5V @ 250µA
Vgs30 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)527 pF @ 100 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature156W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypeTO-263 (D2PAK)
SupplierDevicePackageTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
3890
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.5976 | |
| 10 | 0.5856 | |
| 100 | 0.5677 | |
| 1000 | 0.5498 | |
| 10000 | 0.5259 |
Associated Product
