SIHD11N80AE-GE3
Part NoSIHD11N80AE-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 800V 8A TO252AA
Datasheet
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ECAD Module
Specification
PackageTube
SeriesE
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)800 V
Current-ContinuousDrain(Id)@25°C8A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)450mOhm @ 5.5A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs42 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)804 pF @ 100 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature78W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypeTO-252AA
SupplierDevicePackageTO-252-3, DPak (2 Leads + Tab), SC-63
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
4880
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.5743 | |
| 10 | 1.5428 | |
| 100 | 1.4956 | |
| 1000 | 1.4484 | |
| 10000 | 1.3854 |
Associated Product
