SIHD5N50D-E3
Part NoSIHD5N50D-E3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 500V 5.3A DPAK
Datasheet
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Specification
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)500 V
Current-ContinuousDrain(Id)@25°C5.3A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)1.5Ohm @ 2.5A, 10V
RdsOn(Max)@Id5V @ 250µA
Vgs20 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)325 pF @ 100 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature104W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypeTO-252AA
SupplierDevicePackageTO-252-3, DPak (2 Leads + Tab), SC-63
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
6434
Pricing
QTY | UNIT PRICE | EXT PRICE |
---|---|---|
1 | 1.2019 | |
10 | 1.1779 | |
100 | 1.1418 | |
1000 | 1.1057 | |
10000 | 1.0577 |