SIHF12N60E-GE3
Part NoSIHF12N60E-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 600V 12A TO220
Datasheet
Download Now!
ECAD Module
Specification
PackageTape & Reel (TR)
SeriesE
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)600 V
Current-ContinuousDrain(Id)@25°C12A (Tc)
DriveVoltage(MaxRdsOn380mOhm @ 6A, 10V
MinRdsOn)4V @ 250µA
RdsOn(Max)@Id58 nC @ 10 V
Vgs±30V
Vgs(th)(Max)@Id937 pF @ 100 V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds33W (Tc)
FETFeature-55°C ~ 150°C (TJ)
PowerDissipation(Max)Through Hole
OperatingTemperatureTO-220 Full Pack
MountingTypeTO-220-3 Full Pack
SupplierDevicePackage10V
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
8205
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 3.0894 | |
| 10 | 3.0276 | |
| 100 | 2.9349 | |
| 1000 | 2.8422 | |
| 10000 | 2.7187 |
Associated Product
