SIHF12N65E-GE3
Part NoSIHF12N65E-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 650V 12A TO220
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)650 V
Current-ContinuousDrain(Id)@25°C12A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)380mOhm @ 6A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs70 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)1224 pF @ 100 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature33W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-220 Full Pack
SupplierDevicePackageTO-220-3 Full Pack
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
7829
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 2.6568 | |
| 10 | 2.6037 | |
| 100 | 2.524 | |
| 1000 | 2.4443 | |
| 10000 | 2.338 |
Associated Product
