SIHF18N50C-E3
Part NoSIHF18N50C-E3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 500V 18A TO220-3
Datasheet
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ECAD Module
Specification
PackageBulk
Series-
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)500 V
Current-ContinuousDrain(Id)@25°C18A (Tc)
DriveVoltage(MaxRdsOn270mOhm @ 10A, 10V
MinRdsOn)5V @ 250µA
RdsOn(Max)@Id76 nC @ 10 V
Vgs2942 pF @ 25 V
Vgs(th)(Max)@Id-
Vgs(Max)38W (Tc)
InputCapacitance(Ciss)(Max)@Vds-55°C ~ 150°C (TJ)
FETFeatureThrough Hole
PowerDissipation(Max)TO-220-3
OperatingTemperatureTO-220-3
MountingType10V
SupplierDevicePackage±30V
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification
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7381
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Associated Product
