SIHF9630S-GE3

Part NoSIHF9630S-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 200V 6.5A D2PAK

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ECAD Module

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Specification

PackageTape & Reel (TR)

Series-

ProductStatusActive

FETTypeP-Channel

TechnologyMOSFET (Metal Oxide)

DraintoSourceVoltage(Vdss)200 V

Current-ContinuousDrain(Id)@25°C6.5A (Tc)

DriveVoltage(MaxRdsOn10V

MinRdsOn)800mOhm @ 3.9A, 10V

RdsOn(Max)@Id4V @ 250µA

Vgs29 nC @ 10 V

Vgs(th)(Max)@Id±20V

Vgs(Max)700 pF @ 25 V

InputCapacitance(Ciss)(Max)@Vds-

FETFeature3W (Ta), 74W (Tc)

PowerDissipation(Max)-55°C ~ 150°C (TJ)

OperatingTemperatureSurface Mount

MountingTypeTO-263 (D2PAK)

SupplierDevicePackageTO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Package/Case-

GateCharge(Qg)(Max)@Vgs-

Grade

Qualification

In Stock: 4216
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