SIHF9630S-GE3
Part NoSIHF9630S-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET P-CH 200V 6.5A D2PAK
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR)
Series-
ProductStatusActive
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)200 V
Current-ContinuousDrain(Id)@25°C6.5A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)800mOhm @ 3.9A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs29 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)700 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature3W (Ta), 74W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypeTO-263 (D2PAK)
SupplierDevicePackageTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
4216
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.72 | |
| 10 | 0.7056 | |
| 100 | 0.684 | |
| 1000 | 0.6624 | |
| 10000 | 0.6336 |
Associated Product
