SIHFR120-GE3
Part NoSIHFR120-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CHANNEL 100V
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)100 V
Current-ContinuousDrain(Id)@25°C7.7A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)270mOhm @ 4.6A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs16 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)360 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature2.5W (Ta), 42W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypeTO-252AA
SupplierDevicePackageTO-252-3, DPak (2 Leads + Tab), SC-63
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
2543
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.7638 | |
| 10 | 0.7485 | |
| 100 | 0.7256 | |
| 1000 | 0.7027 | |
| 10000 | 0.6721 |
Associated Product
