SIHFR1N60A-GE3
Part NoSIHFR1N60A-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 600V 1.4A TO252AA
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)600 V
Current-ContinuousDrain(Id)@25°C1.4A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)7Ohm @ 840mA, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs14 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)229 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature36W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypeTO-252AA
SupplierDevicePackageTO-252-3, DPak (2 Leads + Tab), SC-63
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
5391
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.8736 | |
| 10 | 0.8561 | |
| 100 | 0.8299 | |
| 1000 | 0.8037 | |
| 10000 | 0.7688 |
Associated Product
