SIHG120N60E-GE3
Part NoSIHG120N60E-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 600V 25A TO247AC
Datasheet
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ECAD Module
Specification
PackageTube
SeriesE
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)600 V
Current-ContinuousDrain(Id)@25°C25A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)120mOhm @ 12A, 10V
RdsOn(Max)@Id5V @ 250µA
Vgs45 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)1562 pF @ 100 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature179W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-247AC
SupplierDevicePackageTO-247-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
3560
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 2.8124 | |
| 10 | 2.7562 | |
| 100 | 2.6718 | |
| 1000 | 2.5874 | |
| 10000 | 2.4749 |
Associated Product
