SIHG33N65EF-GE3
Part NoSIHG33N65EF-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 650V 31.6A TO247AC
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)650 V
Current-ContinuousDrain(Id)@25°C31.6A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)109mOhm @ 16.5A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs171 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)4026 pF @ 100 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature313W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperature-
MountingType-
SupplierDevicePackageThrough Hole
Package/CaseTO-247AC
GateCharge(Qg)(Max)@VgsTO-247-3
Grade
Qualification
In Stock:
7086
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 6.9472 | |
| 10 | 6.8083 | |
| 100 | 6.5998 | |
| 1000 | 6.3914 | |
| 10000 | 6.1135 |
Associated Product
