SIHG47N60E-GE3
Part NoSIHG47N60E-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 600V 47A TO247AC
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)600 V
Current-ContinuousDrain(Id)@25°C47A (Tc)
DriveVoltage(MaxRdsOn64mOhm @ 24A, 10V
MinRdsOn)4V @ 250µA
RdsOn(Max)@Id220 nC @ 10 V
Vgs±30V
Vgs(th)(Max)@Id9620 pF @ 100 V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds357W (Tc)
FETFeature-55°C ~ 150°C (TJ)
PowerDissipation(Max)Through Hole
OperatingTemperatureTO-247AC
MountingTypeTO-247-3
SupplierDevicePackage10V
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
30165
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 7.8708 | |
| 10 | 7.7134 | |
| 100 | 7.4773 | |
| 1000 | 7.2411 | |
| 10000 | 6.9263 |
Associated Product
