SIHJ6N65E-T1-GE3
Part NoSIHJ6N65E-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 650V 5.6A PPAK SO-8
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)650 V
Current-ContinuousDrain(Id)@25°C5.6A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)868mOhm @ 3A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs32 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)596 pF @ 100 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature74W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypePowerPAK® SO-8
SupplierDevicePackagePowerPAK® SO-8
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
4774
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 2.3575 | |
| 10 | 2.3103 | |
| 100 | 2.2396 | |
| 1000 | 2.1689 | |
| 10000 | 2.0746 |
Associated Product
