SIHJ8N60E-T1-GE3
Part NoSIHJ8N60E-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 600V 8A PPAK SO-8
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)600 V
Current-ContinuousDrain(Id)@25°C8A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)520mOhm @ 4A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs44 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)754 pF @ 100 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature89W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypePowerPAK® SO-8
SupplierDevicePackagePowerPAK® SO-8
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
5532
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 2.0467 | |
| 10 | 2.0058 | |
| 100 | 1.9444 | |
| 1000 | 1.883 | |
| 10000 | 1.8011 |
Associated Product
