SIHP12N50C-E3
Part NoSIHP12N50C-E3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 500V 12A TO220AB
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)500 V
Current-ContinuousDrain(Id)@25°C12A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)555mOhm @ 4A, 10V
RdsOn(Max)@Id5V @ 250µA
Vgs48 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)1375 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature208W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingType-
SupplierDevicePackageTO-220-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
18415
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 2.668 | |
| 10 | 2.6146 | |
| 100 | 2.5346 | |
| 1000 | 2.4546 | |
| 10000 | 2.3478 |
Associated Product
