SIHP30N60E-GE3
Part NoSIHP30N60E-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 600V 29A TO220AB
Datasheet
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ECAD Module
Specification
PackageTube
SeriesE
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)600 V
Current-ContinuousDrain(Id)@25°C29A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)125mOhm @ 15A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs130 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)2600 pF @ 100 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature250W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingType-
SupplierDevicePackageTO-220-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
17470
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 6.095 | |
| 10 | 5.9731 | |
| 100 | 5.7902 | |
| 1000 | 5.6074 | |
| 10000 | 5.3636 |
Associated Product
