SIHP6N80E-BE3
Part NoSIHP6N80E-BE3
ManufacturerVishay Siliconix
DescriptionN-CHANNEL 800V
Datasheet
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ECAD Module
Specification
PackageTube
SeriesE
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)800 V
Current-ContinuousDrain(Id)@25°C5.4A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)940mOhm @ 3A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs44 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)827 pF @ 100 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature78W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-220AB
SupplierDevicePackageTO-220-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
12411
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 2.7846 | |
| 10 | 2.7289 | |
| 100 | 2.6454 | |
| 1000 | 2.5618 | |
| 10000 | 2.4504 |
Associated Product
