SIHU2N80E-GE3
Part NoSIHU2N80E-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 800V 2.8A IPAK
Datasheet
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ECAD Module
Specification
PackageTube
SeriesE
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)800 V
Current-ContinuousDrain(Id)@25°C2.8A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)2.75Ohm @ 1A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs19.6 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)315 pF @ 100 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature62.5W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-251AA
SupplierDevicePackageTO-251-3 Short Leads, IPak, TO-251AA
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
4196
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.5859 | |
| 10 | 0.5742 | |
| 100 | 0.5566 | |
| 1000 | 0.539 | |
| 10000 | 0.5156 |
Associated Product
