SIHU2N80E-GE3

Part NoSIHU2N80E-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 800V 2.8A IPAK

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ECAD Module

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Specification

PackageTube

SeriesE

ProductStatusActive

FETTypeN-Channel

TechnologyMOSFET (Metal Oxide)

DraintoSourceVoltage(Vdss)800 V

Current-ContinuousDrain(Id)@25°C2.8A (Tc)

DriveVoltage(MaxRdsOn10V

MinRdsOn)2.75Ohm @ 1A, 10V

RdsOn(Max)@Id4V @ 250µA

Vgs19.6 nC @ 10 V

Vgs(th)(Max)@Id±30V

Vgs(Max)315 pF @ 100 V

InputCapacitance(Ciss)(Max)@Vds-

FETFeature62.5W (Tc)

PowerDissipation(Max)-55°C ~ 150°C (TJ)

OperatingTemperatureThrough Hole

MountingTypeTO-251AA

SupplierDevicePackageTO-251-3 Short Leads, IPak, TO-251AA

Package/Case-

GateCharge(Qg)(Max)@Vgs-

Grade

Qualification

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