SIHU6N65E-GE3
Part NoSIHU6N65E-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 650V 7A IPAK
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)650 V
Current-ContinuousDrain(Id)@25°C7A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)600mOhm @ 3A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs48 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)820 pF @ 100 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature78W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeIPAK (TO-251)
SupplierDevicePackageTO-251-3 Long Leads, IPak, TO-251AB
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
2516
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.8732 | |
| 10 | 0.8557 | |
| 100 | 0.8295 | |
| 1000 | 0.8033 | |
| 10000 | 0.7684 |
Associated Product
