SIHU7N60E-GE3
Part NoSIHU7N60E-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 600V 7A IPAK
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)600 V
Current-ContinuousDrain(Id)@25°C7A (Tc)
DriveVoltage(MaxRdsOn600mOhm @ 3.5A, 10V
MinRdsOn)4V @ 250µA
RdsOn(Max)@Id40 nC @ 10 V
Vgs±30V
Vgs(th)(Max)@Id680 pF @ 100 V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds78W (Tc)
FETFeature-55°C ~ 150°C (TJ)
PowerDissipation(Max)-
OperatingTemperature-
MountingTypeThrough Hole
SupplierDevicePackageTO-251AA
Package/CaseTO-251-3 Short Leads, IPak, TO-251AA
GateCharge(Qg)(Max)@Vgs10V
Grade
Qualification
In Stock:
7303
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.4608 | |
| 10 | 1.4316 | |
| 100 | 1.3878 | |
| 1000 | 1.3439 | |
| 10000 | 1.2855 |
Associated Product
