SIHW33N60E-GE3
Part NoSIHW33N60E-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 600V 33A TO247AD
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)600 V
Current-ContinuousDrain(Id)@25°C33A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)99mOhm @ 16.5A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs150 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)3508 pF @ 100 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature278W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperature-
MountingType-
SupplierDevicePackageThrough Hole
Package/CaseTO-247AD
GateCharge(Qg)(Max)@VgsTO-3P-3 Full Pack
Grade
Qualification
In Stock:
7650
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 6.6768 | |
| 10 | 6.5433 | |
| 100 | 6.343 | |
| 1000 | 6.1427 | |
| 10000 | 5.8756 |
Associated Product
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