SIJH5100E-T1-GE3
Part NoSIJH5100E-T1-GE3
ManufacturerVishay Siliconix
DescriptionN-CHANNEL 100 V (D-S) 175C MOSFE
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)100 V
Current-ContinuousDrain(Id)@25°C28A (Ta), 277A (Tc)
DriveVoltage(MaxRdsOn7.5V, 10V
MinRdsOn)1.89mOhm @ 20A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs128 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)6900 pF @ 50 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature3.3W (Ta), 333W (Tc)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperatureSurface Mount
MountingTypePowerPAK® 8 x 8
SupplierDevicePackagePowerPAK® 8 x 8
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
6616
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 5.34 | |
| 10 | 5.2332 | |
| 100 | 5.073 | |
| 1000 | 4.9128 | |
| 10000 | 4.6992 |
Associated Product
