SIJH800E-T1-GE3
Part NoSIJH800E-T1-GE3
ManufacturerVishay Siliconix
DescriptionN-CHANNEL 80-V (D-S) 175C MOSFET
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET® Gen IV
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)80 V
Current-ContinuousDrain(Id)@25°C29A (Ta), 299A (Tc)
DriveVoltage(MaxRdsOn1.55mOhm @ 20A, 10V
MinRdsOn)4V @ 250µA
RdsOn(Max)@Id210 nC @ 10 V
Vgs±20V
Vgs(th)(Max)@Id10230 pF @ 40 V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds3.3W (Ta), 333W (Tc)
FETFeature-55°C ~ 175°C (TJ)
PowerDissipation(Max)Surface Mount
OperatingTemperaturePowerPAK® 8 x 8
MountingTypePowerPAK® 8 x 8
SupplierDevicePackage7.5V, 10V
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
3700
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 4.9862 | |
| 10 | 4.8865 | |
| 100 | 4.7369 | |
| 1000 | 4.5873 | |
| 10000 | 4.3879 |
Associated Product
