SIR167DP-T1-GE3
Part NoSIR167DP-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET P-CH 30V 60A PPAK SO-8
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET® Gen III
ProductStatusActive
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)30 V
Current-ContinuousDrain(Id)@25°C60A (Tc)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)5.5mOhm @ 15A, 10V
RdsOn(Max)@Id2.5V @ 250µA
Vgs111 nC @ 10 V
Vgs(th)(Max)@Id±25V
Vgs(Max)4380 pF @ 15 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature65.8W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypePowerPAK® SO-8
SupplierDevicePackagePowerPAK® SO-8
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
10215
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.0302 | |
| 10 | 1.0096 | |
| 100 | 0.9787 | |
| 1000 | 0.9478 | |
| 10000 | 0.9066 |
Associated Product
