SIR186LDP-T1-RE3
Part NoSIR186LDP-T1-RE3
ManufacturerVishay Siliconix
DescriptionN-CHANNEL 60-V (D-S) MOSFET POWE
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET® Gen IV
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)60 V
Current-ContinuousDrain(Id)@25°C23.8A (Ta), 80.3A (Tc)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)4.4mOhm @ 15A, 10V
RdsOn(Max)@Id2.5V @ 250µA
Vgs48 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)1980 pF @ 30 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature5W (Ta), 57W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypePowerPAK® SO-8
SupplierDevicePackagePowerPAK® SO-8
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
5681
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.1155 | |
| 10 | 1.0932 | |
| 100 | 1.0597 | |
| 1000 | 1.0263 | |
| 10000 | 0.9816 |
Associated Product
