SIR410DP-T1-GE3
Part NoSIR410DP-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 20V 35A PPAK SO-8
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)20 V
Current-ContinuousDrain(Id)@25°C35A (Tc)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)4.8mOhm @ 20A, 10V
RdsOn(Max)@Id2.5V @ 250µA
Vgs41 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)1600 pF @ 10 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature4.2W (Ta), 36W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypePowerPAK® SO-8
SupplierDevicePackagePowerPAK® SO-8
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
12448
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.9785 | |
| 10 | 0.9589 | |
| 100 | 0.9296 | |
| 1000 | 0.9002 | |
| 10000 | 0.8611 |
Associated Product
