SIR418DP-T1-GE3
RoHS

SIR418DP-T1-GE3

Part NoSIR418DP-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 40V 40A PPAK SO-8
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ECAD Module SIR418DP-T1-GE3
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Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)40 V
Current-ContinuousDrain(Id)@25°C40A (Tc)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)5mOhm @ 20A, 10V
RdsOn(Max)@Id2.4V @ 250µA
Vgs±20V
Vgs(th)(Max)@Id2410 pF @ 20 V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds39W (Tc)
FETFeature-55°C ~ 150°C (TJ)
PowerDissipation(Max)Surface Mount
OperatingTemperaturePowerPAK® SO-8
MountingTypePowerPAK® SO-8
SupplierDevicePackage75 nC @ 10 V
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock: 17587
Pricing
QTY UNIT PRICE EXT PRICE
1 1.391
10 1.3632
100 1.3215
1000 1.2797
10000 1.2241
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
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