SIR432DP-T1-GE3
Part NoSIR432DP-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 100V 28.4A PPAK SO-8
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR)
SeriesTrenchFET®
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)100 V
Current-ContinuousDrain(Id)@25°C28.4A (Tc)
DriveVoltage(MaxRdsOn7.5V, 10V
MinRdsOn)30.6mOhm @ 8.6A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs32 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds5W (Ta), 54W (Tc)
FETFeature-55°C ~ 150°C (TJ)
PowerDissipation(Max)Surface Mount
OperatingTemperaturePowerPAK® SO-8
MountingTypePowerPAK® SO-8
SupplierDevicePackage1170 pF @ 50 V
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification
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9656
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Associated Product
