SIR4608DP-T1-GE3
Part NoSIR4608DP-T1-GE3
ManufacturerVishay Siliconix
DescriptionN-CHANNEL 60 V (D-S) MOSFET POWE
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET® Gen IV
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)60 V
Current-ContinuousDrain(Id)@25°C13.1A (Ta), 42.8A (Tc)
DriveVoltage(MaxRdsOn7.5V, 10V
MinRdsOn)11.8mOhm @ 10A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs18 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)740 pF @ 30 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature3.6W (Ta), 39W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperature-
MountingType-
SupplierDevicePackageSurface Mount
Package/CasePowerPAK® SO-8
GateCharge(Qg)(Max)@VgsPowerPAK® SO-8
Grade
Qualification
In Stock:
2878
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.0545 | |
| 10 | 1.0334 | |
| 100 | 1.0018 | |
| 1000 | 0.9701 | |
| 10000 | 0.928 |
Associated Product
