SIR510DP-T1-RE3
Part NoSIR510DP-T1-RE3
ManufacturerVishay Siliconix
DescriptionN-CHANNEL 100 V (D-S) MOSFET POW
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET® Gen V
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)100 V
Current-ContinuousDrain(Id)@25°C31A (Ta), 126A (Tc)
DriveVoltage(MaxRdsOn7.5V, 10V
MinRdsOn)3.6mOhm @ 20A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs81 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)4980 pF @ 50 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature6.25W (Ta), 104W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypePowerPAK® SO-8
SupplierDevicePackagePowerPAK® SO-8
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
4387
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 2.2464 | |
| 10 | 2.2015 | |
| 100 | 2.1341 | |
| 1000 | 2.0667 | |
| 10000 | 1.9768 |
Associated Product
