SIR512DP-T1-RE3
Part NoSIR512DP-T1-RE3
ManufacturerVishay Siliconix
DescriptionN-CHANNEL 100 V (D-S) MOSFET POW
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)100 V
Current-ContinuousDrain(Id)@25°C25.1A (Ta), 100A (Tc)
DriveVoltage(MaxRdsOn7.5V, 10V
MinRdsOn)4.5mOhm @ 20A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs62 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)3400 pF @ 50 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature6W (Ta), 96.2W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypePowerPAK® SO-8
SupplierDevicePackagePowerPAK® SO-8
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
4294
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 2.1216 | |
| 10 | 2.0792 | |
| 100 | 2.0155 | |
| 1000 | 1.9519 | |
| 10000 | 1.867 |
Associated Product
