SIR5607DP-T1-RE3
Part NoSIR5607DP-T1-RE3
ManufacturerVishay Siliconix
DescriptionP-CHANNEL 60 V (D-S) MOSFET POWE
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusActive
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)60 V
Current-ContinuousDrain(Id)@25°C22.2A (Ta), 90.9A (Tc)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)7mOhm @ 20A, 10V
RdsOn(Max)@Id2.6V @ 250µA
Vgs112 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)5020 pF @ 30 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature6.25W (Ta), 104W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypePowerPAK® SO-8
SupplierDevicePackagePowerPAK® SO-8
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
20436
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 3.2725 | |
| 10 | 3.207 | |
| 100 | 3.1089 | |
| 1000 | 3.0107 | |
| 10000 | 2.8798 |
Associated Product
