SIR5623DP-T1-RE3
Part NoSIR5623DP-T1-RE3
ManufacturerVishay Siliconix
DescriptionP-CHANNEL 60 V (D-S) MOSFET POWE
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series-
ProductStatusActive
FETTypeP-Channel
Technology10.5A (Ta), 37.1A(Tc)
DraintoSourceVoltage(Vdss)4.8W (Ta), 59.5W (Tc)
Current-ContinuousDrain(Id)@25°CSurface Mount
DriveVoltage(MaxRdsOnPowerPAK® SO-8
MinRdsOn)PowerPAK® SO-8
RdsOn(Max)@IdMOSFET (Metal Oxide)
Vgs60 V
Vgs(th)(Max)@Id4.5V, 10V
Vgs(Max)24mOhm @ 10A, 10V
InputCapacitance(Ciss)(Max)@Vds2.6V @ 250µA
FETFeature33 nC @ 10 V
PowerDissipation(Max)±20V
OperatingTemperature1575 pF @ 30 V
MountingType-
SupplierDevicePackage-55°C ~ 150°C (TJ)
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
5367
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.6236 | |
| 10 | 1.5911 | |
| 100 | 1.5424 | |
| 1000 | 1.4937 | |
| 10000 | 1.4288 |
Associated Product
