SIR570DP-T1-RE3
Part NoSIR570DP-T1-RE3
ManufacturerVishay Siliconix
DescriptionN-CHANNEL 150 V (D-S) MOSFET POW
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET® Gen V
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)150 V
Current-ContinuousDrain(Id)@25°C19A (Ta), 77.4A (Tc)
DriveVoltage(MaxRdsOn7.5V, 10V
MinRdsOn)7.9mOhm @ 20A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs71 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)3740 pF @ 75 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature6.25W (Ta), 104W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypePowerPAK® SO-8
SupplierDevicePackagePowerPAK® SO-8
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
3167
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 2.142 | |
| 10 | 2.0992 | |
| 100 | 2.0349 | |
| 1000 | 1.9706 | |
| 10000 | 1.885 |
Associated Product
