SIR582DP-T1-RE3
Part NoSIR582DP-T1-RE3
ManufacturerVishay Siliconix
DescriptionN-CHANNEL 80 V (D-S) MOSFET POWE
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET® Gen V
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)80 V
Current-ContinuousDrain(Id)@25°C28.9A (Ta), 116A (Tc)
DriveVoltage(MaxRdsOn7.5V, 10V
MinRdsOn)3.4mOhm @ 15A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs67 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)3360 pF @ 40 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature5.6W (Ta), 92.5W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypePowerPAK® SO-8
SupplierDevicePackagePowerPAK® SO-8
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
3204
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.888 | |
| 10 | 1.8502 | |
| 100 | 1.7936 | |
| 1000 | 1.737 | |
| 10000 | 1.6614 |
Associated Product
