SIR606DP-T1-GE3
RoHS

SIR606DP-T1-GE3

Part NoSIR606DP-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 100V 37A PPAK SO-8
Datasheet Download Now!
ECAD Module SIR606DP-T1-GE3
Get Quotation Now!
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)100 V
Current-ContinuousDrain(Id)@25°C37A (Tc)
DriveVoltage(MaxRdsOn6V, 10V
MinRdsOn)16.2mOhm @ 15A, 10V
RdsOn(Max)@Id3.6V @ 250µA
Vgs22 nC @ 6 V
Vgs(th)(Max)@Id±20V
Vgs(Max)1360 pF @ 50 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature44.5W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypePowerPAK® SO-8
SupplierDevicePackagePowerPAK® SO-8
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock: 6411
Pricing
QTY UNIT PRICE EXT PRICE
1 1.5141
10 1.4838
100 1.4384
1000 1.393
10000 1.3324
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product